Atomic layer deposition of a mgo barrier for a passivated black phosphorus spintronics platform

HIGHLIGHTS

• who: L.-M. Kern and collaborators from the CNRS University Paris Paris-Saclay, Palaiseau, France have published the research work: Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform, in the Journal: (JOURNAL)
• what: Crucially, the authors demonstrate the use of this ultra-thin MgO capping layer as an efficient tunnel barrier for BP devices (Fig 4) further highlighting the potential of this stabilized platform for spintronics. Below, the authors demonstrate the continuity of this ultra-thin film and thus its possible use as both passivation and tunnel barriers. The . . .
  

   

  

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