HIGHLIGHTS
- who: HfO and collaborators from the University of have published the research work: Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors, in the Journal: (JOURNAL)
- what: The authors report HfO2 -ZrO2 super- lattice heterostructures as a gate stack, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors and scaled down to ~ 20 u00c5, the same gate ox- ide thickness required for high performance transistors. The work demonstrates that HfO2 -ZrO2 multilayers with competing ferroelectric-antiferroelectric order, stabilized in the 2 nm thickness regime, provides a new path towards advanced gate . . .
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