Boron partitioning coefficient above unity in laser crystallized silicon

HIGHLIGHTS

• who: Patrick C. Lill et al. from the Institute for Photovoltaics and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring , have published the Article: Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon, in the Journal: Materials 2017, 10, 189 of /2017/
• what: The present contribution examines the boron accumulation in a laser doping setting without dopants initially incorporated in the wafer. The authors determine a partitioning coefficient k p above unity with k p = 1.25 ± 0.05 and thermally-activated diffusivity DB with a value DB (1687 K) = (3.53 ± 0.44) × 10-4 . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.