Bottom-up plasma-enhanced atomic layer deposition of sio2 by utilizing growth inhibition using nh3 plasma pre-treatment for seamless gap-fill process

HIGHLIGHTS

• who: Yoenju Choi from the DepartmentHee University have published the research: Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process, in the Journal: Scientific Reports Scientific Reports
• what: The bottom-up growth of the u00adSiO2 PE-ALD process was investigated by employing an inhibitor of u00adNH3 plasma pre-treatment to demonstrate seam- and void-less gap fill on an extremely high-aspect-ratio pattern.

SUMMARY

| 1 Vol.:(0123456789) Gas species GPC (nm/cycle) No inhibitor Decreased ratio . . .

 



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