C-v and j-v investigation of hfo2/al2o3 bilayer dielectrics moscaps on (100) β-ga2o3

HIGHLIGHTS

• who: Submitted and colleagues from the Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China , University of Chinese Academy of Sciences, Beijing, China , Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, China , State Key Laboratory of Crystal Materials, Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan, China ( Received have published the Article: C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3, in the Journal: (JOURNAL) of 18/06/2018

SUMMARY

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