HIGHLIGHTS
SUMMARY
One of the most common methods for creating micro- and nanostructures in microelectronics is electron-beam lithography (EBL). Taking into account the influence and correction of the "proximity effect" on the dose absorbed by the electronic resist allows increasing the accuracy of electron lithography, shortens the time to fabricate structures and increases the yield of a suitable product, since it reduces the sensitivity of lithography to random errors. To correct the influence of the "proximity effect" when calculating the exposure dose, the proximity function (PF) is used, i.e., the distribution of the absorbed . . .
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