HIGHLIGHTS
- who: Qigeng Yan and collaborators from the Department of Physics, Baoding University, Baoding, China have published the Article: Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix, in the Journal: Crystals 2022, 12, 1225. of /2022/
- what: The authors aim to employ cathodoluminescence (CL) to investigate the nanostructures on ultrathin InAs layers that are embedded inside the GaAs matrix . The main reason for forming those CL peaks is the InAs heavy hole excitation . Improvements are needed to confirm the physical properties at different growth periods; however, this research provides an applicable method to investigate ultrathin . . .
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