Characterisation of defects in porous silicon as an anode material using positron annihilation doppler broadening spectroscopy

HIGHLIGHTS

  • who: W. J. Legerstee from the Department Storage of Electrochemical Energy, Reactor Institute Delft, Delft University of Technology, Mekelweg, JB Delft, The Netherlands have published the Article: Characterisation of defects in porous silicon as an anode material using positron annihilation Doppler Broadening Spectroscopy, in the Journal: (JOURNAL)
  • what: The forming of defects in porous Silicon anodes were investigated for different lithiation conditions by using positron annihilation techniques as a high sensitive defect probe.
  • how: The variable energy positron beam For Positron Annihilation Doppler Broadening Spectroscopy (PADBS) measurements the authors used the Delft Variable . . .

     

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