Characterization of hetero‑epitaxial ge films on si using multiwavelength micro‑raman

HIGHLIGHTS

• who: Singapore. and colleagues from the Nanyang Technological University, San Jose, California, USA have published the article: Characterization of hetero‑epitaxial Ge films on Si using multiwavelength micro‑raman, in the Journal: (JOURNAL) of 01/09/2022
• what: This was Paper 1766 presented at the Cancun Mexico Meeting of the October 5-9 2014.

SUMMARY

Raman excitation wavelengths for various Ge/Si and possible alloy structures of Ge with Si were investigated. For strain analysis of epitaxial Ge(100) films and comparison with multi wavelength Raman characterization results, θ-2θ XRD scans . . .

 



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