Characterization of m-gan and a-gan crystallographic planes after being chemically etched in tmah solution

HIGHLIGHTS

• who: Nedal Al Taradeh et al. from the Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, IT, Université Sherbrooke, University Côte d'Azur, CNRS (Centre National la Recherche Scientifique), CRHEA (Centre Recherche have published the Article: Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution, in the Journal: Energies 2021, 14, x FOR PEER REVIEW of /2021/
• what: The aim of this paper is to investigate one of the most critical steps in the fabrication process of vertical GaN FinFET transistors, which is the etching of the channel . . .
  

   

  

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