HIGHLIGHTS
- who: Dencho Spassov and collaborators from the Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee, Institute of Physics, Polish Academy of Sciences, AlLotniku00f3w, Warsaw, Poland have published the article: Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers, in the Journal: Materials 2022, 15, 6285. of 15/08/2022
- what: The authors investigate metal/blocking oxide/high-k layer/tunnel oxide/Si (MOHOS) structures from the viewpoint of their application as memory cells in flash memories. The aim of the doping/treatment is to modify . . .
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