HIGHLIGHTS
- who: Manuel Kollmuss and collaborators from the , Erlangen, Germany have published the paper: Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200u00b0C for Photonic Applications, in the Journal: (JOURNAL)
SUMMARY
Silicon Carbide and Related Materials 2021 acquired using an optical differential pyrometer. Calibration was verified by observing the melting of Germanium on Si substrate on the susceptor at 938°C. N-doped Silicon Wafer pieces with the area of 2.5x2.5 cm² from SIEGERT WAFER GmbH are used as substrates. Before enclosing the substrates into the reaction . . .
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