HIGHLIGHTS
- who: Yanrong Cao et al. from the School of Electronics and Mechanical Engineering, Xidian University, Xi`an, China have published the research work: Combined Effect of TID Radiation and Electrical Stress on NMOSFETs, in the Journal: Micromachines 2022, 13, 1860 Micromachines 2022, 13, 1860 of 29/Oct/2022
- what: Mukhopadhyay et_al believed that the main reason for the degradation of high-K gate devices was the H-bond broken at the interface of HfO2 /SiO2 and H- diffusion in the HfO2 layer due to the strong electric field . The electrons introduced by the radiation effect . . .
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