HIGHLIGHTS
- who: Rongrong Cao from the (UNIVERSITY) have published the paper: Compact artificial neuron based on anti-ferroelectric transistor, in the Journal: (JOURNAL) of 22/09/2021
- what: The authors propose an anti-ferroelectric field-effect transistor neuron based on the inherent polarization and depolarization of Hf0.2Zr0.8O2 anti-ferroelectric film to meet these challenges. The authors report a leaky integrate-and-fire (LIF) neuron based on a CMOS-compatible anti-ferroelectric field-effect transistor (AFeFET). Subsequently, the authors demonstrate a two-layer spiking neural_network (SNN) with full-ferroelectric architecture for learning and recognizing the . . .
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