HIGHLIGHTS
- who: H. Lu and collaborators from the Tohoku University, Sendai, Japan, February , have published the research work: Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe,Co magnetic tunnel junctions, in the Journal: (JOURNAL)
- what: The authors compare the band structures of MgO and h-BN with their band gaps corrected for the GGA band error.
SUMMARY
The continued scaling of MRAM devices has been analyzed9 with MgO as the tunnel barrier, but it is interesting to also consider it with h-BN as the tunnel barrier. So far . . .
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