HIGHLIGHTS
- who: LICENSE and collaborators from the (UNIVERSITY) have published the research: Complementary Resistive Switching in ZnO/Al2O3 bi-layer devices, in the Journal: (JOURNAL)
- what: The paper focuses on the fabrication, characterization, performance of the device as memory, in addition to describing the possible mechanism of CRS characteristics of Au/ZnO(10nm)/ Al2O3 (10nm)/Fluorine doped tin oxide (FTO) device. It has been observed that forming with negative voltage showed high variability in its I-V characteristics with insignificant Roff/Ron ratio due to uneven distribution of excessive defects present in the device, whereas EF . . .
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