Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding gan substrates

HIGHLIGHTS

• who: Takeaki Hamachi from the Graduate SchoolOsaka University Japan have published the research work: Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates, in the Journal: Scientific Reports Scientific Reports
• what: Based on these studies, the majority of the b=1c screw TDs in this work had closed-core structures with no deep states inducing current leakage, while a very few b=1c screw TDs, such as that associated with pit #M2, had an atomically different closed-core structure with harmful deep states. The authors propose that the . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or E-mail:

  If you don't have an account, you can create one here.