Comprehensive power gain assessment of gan-soi-finfet for improved rf/wireless performance using tcad

HIGHLIGHTS

• who: Ajay Kumar and collaborators from the ECE Department, Jaypee Institute of Information Technology, Noida, India Innovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST) have published the research: Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD, in the Journal: Micromachines 2022, 13, x FOR PEER REVIEW Figure 6. of /2022/
• what: The authors present a radio frequency (RF) assessment of the nanoscale gallium nitridesilicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET).
• how: In this work the proposed device (GaN-SOI . . .
  

   

  

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