Controlled p-type doping of mos2 monolayer by copper chloride

HIGHLIGHTS

• who: Sangyeon Pak from the To conclude, we have demonstrated simple and effective p-type doping on the D Mo, FETs by simply spin coating the device with CuCl, solution at ambient conditionsThe effect of CuCl, doping was confirmed analytically through Raman, PL, and XPS measurements. The p-type doping on the Mo, channel showed largely decreased channel conductance and the shift in threshold voltages towards positive gate voltages in back-gated Mo, transistors. It was also shown that the amount of doping can be simply controlled by the CuCl, concentrations in a solution containing ethanol. The . . .
  

   

  

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