Controlling the carrier injection efficiency in 3d nanocrystalline silicon floating gate memory by novel design of control layer

HIGHLIGHTS

• who: Hongsheng Hu and colleagues from the School of Electronic Science and Engineering, Nanjing University, Nanjing, China have published the paper: Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer, in the Journal: Nanomaterials 2023, 13, 962. of /2023/
• what: The authors focus on the C-V investigation of an nc-Si floating-gate MOS structure to improve the carrier injection in 3D nc-Si floating-gate memory.
• future: Even with the of the bias increasing from 250 to 2500 mV/s the counterclockwise . . .
  

   

  

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