HIGHLIGHTS
- who: Jing Li and colleagues from the Grenoble Alpes University NÉEL, Grenoble, France have published the article: Correlated electron-hole mechanism for molecular doping in organic semiconductors, in the Journal: (JOURNAL) of 12/07/2017
- what: The authors demonstrate that while the acceptor level lies very deep in the gap the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and together with spin statistics and structural relaxation effects rationalize the possibility for room-temperature dopant ionization. Finite-size effects are also addressed in Fig 5(a), where the authors compare . . .
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