HIGHLIGHTS
- who: - III-V MOSFET et al. from the (UNIVERSITY) have published the research work: Critical Geometrical Parameters in, in the Journal: (JOURNAL)
- what: The authors investigate the of the and to critical geometrical parameters in In0.53Ga0.47As and Si MOSFETs by means of 3D quantum-corrected drift-diffusion simulations. To assess the and effects also from the scaling perspective the authors consider devices belonging to two technological nodes with gate lengths 15 nm and 10.4 nm designed according to ITRS specifications. sources included in the analysis are Fluctuation (RDF) Work Function Fluctuation (WFF . . .
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