Current crowding mediated large contact noise in graphene field-effect transistors

HIGHLIGHTS

• who: Srijit Goswami from the to this workw Present address: QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft , GA, The Netherlands. have published the research work: Current crowding mediated large contact noise in graphene field-effect transistors, in the Journal: NATURE COMMUNICATIONS NATURE COMMUNICATIONS of 24/03/2016
• what: The authors study a series of graphene FETs with different mobilities, substrates and contacting configurations to demonstrate that electrical noise at the metal-graphene junction can be the dominant source of 1/f noise in graphene FETs, especially for invasive contacting geometry, where . . .
  

   

  

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