Defect free strain relaxation of microcrystals on mesoporous patterned silicon

HIGHLIGHTS

  • who: Alexandre Heintz from the (UNIVERSITY) have published the paper: Defect free strain relaxation of microcrystals on mesoporous patterned silicon, in the Journal: (JOURNAL) of 19/Oct/2022
  • what: The authors demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. Nature Communications | 13:6624 a Exx Eyy 0 Exy Rxy Exx Eyy b Exy Rxy This study provides a proof of concept for the synthesis of effective compliant substrate for heteroepitaxy and the integration of lattice mismatch microcrystals on Si platform.
  • how: STEM imaging of Ge microcrystals and . . .

     

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