Defect-induced magnetism in homoepitaxial srtio3

HIGHLIGHTS

• who: A. D. Rata and colleagues from the Institut fu00fcr Physik, Martin-Luther-Universitu00e4t Halle-Wittenberg, Halle, Germany Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, Denmark have published the Article: Defect-induced magnetism in homoepitaxial SrTiO3, in the Journal: (JOURNAL)
• what: The authors demonstrate tunable magnetism in atomically engineered STO thin films grown on STO substrates by controlling the atomic charge defects of titanium (VTi ) and oxygen (VO ) vacancies. The authors provide deep insights into its association to the following defect types: (i) VTi resulting in a charge rearrangement and . . .
  

   

  

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