HIGHLIGHTS
- who: SHASHI K. DARGAR and collaborators from the Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, South Africa have published the article: Design of Double-Gate Tri-Active Layer Channel Based IGZO Thin-Film Transistor for Improved Performance of Ultra-Low-Power RFID Rectifier, in the Journal: (JOURNAL)
- what: The small-signal parameters of the model are derived from s-parameter measurements using the method described.
SUMMARY
In this paper, the authors have proposed a Double-Gate (DG) amorphous IGZO thin-film transistor that contains a Tri-Active . . .
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