Development of a method for calculating effective displacement damage doses in semiconductors and applications to space field

HIGHLIGHTS

• who: Yosuke Iwamoto and Tatsuhiko Sato from the Nuclear Science and Engineering Center, Japan Atomic Energy Agency, Ibaraki, Japan Editor:, University of Liverpool have published the paper: Development of a method for calculating effective displacement damage doses in semiconductors and applications to space field, in the Journal: PLOS ONE of 20/04/2022
• what: This work developed a new model for calculating the conventional and effective DDD values for silicon carbide (SiC) indium arsenide (InAs) gallium arsenide (GaAs) and gallium nitride (GaN) semiconductors.
• how: The results indicated that the effective DDD could be . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.