Direct synthesis of ultrathin soi structure by extremely low-energy oxygen implantation

HIGHLIGHTS

• who: Yasushi Hoshino and collaborators from the DepartmentKanagawa University Kanagawa, Japan have published the Article: Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation, in the Journal: (JOURNAL) of 13/06/2016
• what: We succeeded in synthesizing ultrathin continuous SOI and BOX structure with both thicknesses of less than 20 nm by extremely low-energy hot oxygen implantation at 10 keV with ion-fluence of 1×1017 ions/cm2 followed by surprisingly low-temperature annealing at 1050◦ C. It is clearly indicated in the RBS and SIMS analysis that the elemental compositions . . .
  

   

  

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