Dislocation analysis of nanoindentation on different crystal planes of 6h-sic based on molecular dynamics simulation

HIGHLIGHTS

• who: Dongling Yu et al. from the School of Mechanical and Electronic Engineering, Jingdezhen Ceramic University, Jingdezhen, China have published the research work: Dislocation Analysis of Nanoindentation on Different Crystal Planes of 6H-SiC Based on Molecular Dynamics Simulation, in the Journal: Crystals 2022, 1223 of /2022/
• what: __SECTION__ Conclusions.

SUMMARY

The 6H-SiC substrate with indentation surface has the most atoms, and the 6H-SiC substrate with indentation surface has the least atoms. There is a small difference thebetween dislocation dislocation depth and the indentation depth at the bottom, and . . .

 



If you want to have access to all the content you need to log in!

Thanks :)

Username or E-mail:

If you don't have an account, you can create one here.