Dislocation density-dependent quality factors in ingan quantum dot containing microdisks

HIGHLIGHTS

• who: InGaN Quantum Dot Containing and collaborators from the Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks HA.R. El-Ellaa), M.J. Kappers, R.A.Oliver Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge , QZ, UK F. Rol, K. Russell, E.L. Hu School of Engineering and Applied Sciences, Harvard University, Oxford Street, Cambridge MA, USA Microdisks incorporating InGaN quantum dots were fabricated using Si, microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN super-lattice. Formation of . . .
  

   

  

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