Dislocation filter based on lt-gaas layers for monolithic gaas/si integration

HIGHLIGHTS

• who: Mikhail O. Petrushkov and collaborators from the Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia Department of Physics, Novosibirsk State University, Novosibirsk, Russia have published the research work: Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration, in the Journal: Nanomaterials 2022, 12, x FOR PEER REVIEW of 20 a(blue (blueline-dots) line-dots)and andII-a2 II-a2(red (redline-dots) line-dots)GaAs/Si GaAs/Si HSs. HSs. The The LT-GaAs LT-GaAs layer layer positions positions are are 9indicated indicated . . .
  

   

  

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