Dual metal gate algan/gan high electron mobility transistors with improved transconductance and reduced short channel effects

HIGHLIGHTS

• who: Pinchbeck et al. from the Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield , JD, United Kingdom have published the paper: Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects, in the Journal: (JOURNAL)
• what: The authors demonstrate sub-µm DMG structures on AlGaN/GaN HEMTs with two different gate metals: titanium (Ti) and palladium (Pd), and study the electrical characteristics in comparison with conventional single metal gate (SMG) devices.

SUMMARY

Voltage (V TH ) changes with drain bias. The . . .

 



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