HIGHLIGHTS
- who: Alka Singh et al. from the Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Japan have published the article: Dynamic Single-Electron Transistor Modeling for High-Frequency Capacitance Characterization, in the Journal: (JOURNAL)
- what: By using this model bias frequency and temperature dependences of these capacitances are evaluated. Since the model is implemented in the it can be used to analyze the high-frequency behavior of circuits including SETs and is applied to the characterization of a SET-based inverting amplifier this time. The authors focused on on thethe intrinsic SET SET characteristics . . .
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