Effect of device scaling on electron mobility in nanoscale gan hemts with polarization charge modulation

HIGHLIGHTS

• who: Peng Cui and Yuping Zeng from the Institute of Novel Semiconductors, Shandong University, Jinan, China have published the research work: Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation, in the Journal: Nanomaterials 2022, 1718 of /2022/
• what: The effect of down-scaling on electron mobility is experimentally demonstrated.

SUMMARY

Due to the high breakdown voltage, high two-dimensional electron gas densities, and high electron saturation velocity, gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been ideal for high-frequency and high-power . . .

 



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