HIGHLIGHTS
- who: Jie Jiang and colleagues from the School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China have published the paper: Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT, in the Journal: Materials 2023, 14, x FOR PEER REVIEW of 10/02/2023
- what: This work investigated the effects of single stress and coupling stress on the electrical properties of enhancement Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). In this study, the degradation behavior of the device was studied under three cause . . .
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