HIGHLIGHTS
- who: Xulei Qin et al. from the National Key Laboratory of Science and Technology on Low-Level-Light, Xi'an, China Changchun University of Science and Technology, Changchun, China have published the article: Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices, in the Journal: Advances in Multimedia of 29/08/2022
- what: In this paper, the effect of different doping methods on the electric field distribution is investigated, and the effect of doping concentration on the minority carriers' lifetime is also combined with the Monte-Carlo method to obtain the charge collection . . .
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