HIGHLIGHTS
- who: Nikita Shandyba and collaborators from the Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog, Russia have published the Article: Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth, in the Journal: (JOURNAL)
- what: This paper presents the results of experimental studies of the effect of Si(111) surface modification by Ga-focused ion beam (FIB) at 30 kV accelerating voltage on the features of the epitaxial GaAs (NW) growth processes. The authors show that the effect of the ion dose during surface . . .
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