Effective band gap engineering in multi-principal oxides (cegdla-zr/hf)ox by temperature-induced oxygen vacancies

HIGHLIGHTS

  • who: Yixuan Hu from the State Key LaboratoryTong University have published the Article: Effective band gap engineering in multi-principal oxides (CeGdLa-Zr/Hf)Ox by temperature-induced oxygen vacancies, in the Journal: Scientific Reports Scientific Reports
  • what: The combined experimental observations and theoretical prediction revealed the temperatureinduced OVG process in Zr/Hf-MPO.
  • how: In this study a conventional FCC unit cell was used as shown in Fig 1b which contains 4 metallic atoms at the face-centered sites and 8 O atoms (or O vacancies) at 8 tetrahedral interstices.
 

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