Effects of gan channel downscaling in algan-gan high electron mobility transistor structures grown on aln bulk substrate

HIGHLIGHTS

• who: Reda Elwaradi et al. from the Universitu00e9 Cu00f4te d`Azur, CNRS, CRHEA, rue BGru00e9gory, Valbonne, France, CNRS, University of Lille, Villeneuve d`Ascq, France have published the article: Effects of GaN channel downscaling in AlGaN-GaN high electron mobility transistor structures grown on AlN bulk substrate, in the Journal: (JOURNAL)
• what: To overcome this drawback and to avoid any effect related to the quality of AlN, the authors aimed at investigating the effect of the GaN channel thickness in HEMT epilayers grown on bulk AlN substrates.
• future: The different isolation processes used . . .
  

   

  

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