Effects of indium segregation and strain on near-infrared optical absorption in ingan/gan quantum wells

HIGHLIGHTS

• What: Addressing this gap, the work investigates the effects of Indium surface segregation on NIR optical absorption in InGaN/GaN single quantum wells (SQWs) and double quantum wells (DQWs), incorporating the combined contributions of built-in electric fields and all low-lying ISBTs. The study reveals that random alloy fluctuations significantly impact carrier distribution by employing an atomistic tight-binding model combined with a quantum corrected drift-diffusion model. The consistent red shifts observed for all ISBTs when accounting for ISS effects underscore the importance of shine on such a phenomenon, the authors report in Figure 6 . . .
  

   

  

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