Electrically programmable-erasable in-ga-zn-o thin-film transistor memory with atomic-layer-deposited al2o3/pt nanocrystals/al2o3 gate stack

HIGHLIGHTS

• who: Electrically programmable-erasable InGa-Zn-O thin-film and collaborators from the Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al, / Pt nanocrystals/Al , gate stack Shi-Bing Qian ( u94b1u4ed5u5175 ), Wen-Peng Zhang ( u5f20u6587u9e4f ), Wen-Jun Liu ( u5218u6587u519b ), and Shi-Jin Ding ( u4e01u58ebu8fdb )a State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China have published the research: Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack, in the Journal: (JOURNAL) of 04 . . .
  

   

  

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