Electron-donating amine-interlayer induced n-type doping of polymer:nonfullerene blends for efficient narrowband near-infrared photo-detection

HIGHLIGHTS

  • who: Quan Liu from the Near-infrared photodetector fabrication NIR-OPD were fabricated with an inverted device architecture: glass/ ITO/ETL/Active layer/Mo, AgCommercial patterned ITO (Biotain Crystal, ., u00d7, ., cm, u03a9 sq-1) substrates were firstly ultrasonic cleaned in sequential in deionized water, acetone, and, propanol for , min each, followed by , min UV-Ozone treatment to form a hydrophilic surface. Afterwards, nm of PFN-Br and PDIN were spin-coated on the cleaned ITO in, filled glovebox at , rpm without thermal annealing, while , nm of ZnO and , nm of PEIE (H O) were spincoated at , rpm . . .

     

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