Engineering antiphase boundaries in epitaxial srtio3 to achieve forming free memristive devices

HIGHLIGHTS

• who: Felix V. E. Hensling and collaborators from the PGI-7, Forschungszentrum Ju00fclich GmbH, Ju00fclich, Germany Aachen University have published the article: Engineering antiphase boundaries in epitaxial SrTiO3 to achieve forming free memristive devices, in the Journal: (JOURNAL)

SUMMARY

For both strategies, the formation of antiphase boundaries throughout the thin film is random; utilizing the lattice mismatch further limits the choice of substrate materials, while an off-stoichiometric growth is usually accompanied by a wide variety of different defects besides antiphase boundaries. Efforts have been made to achieve a more controllable formation of . . .

 



If you want to have access to all the content you need to log in!

Thanks :)

Username or E-mail:

If you don't have an account, you can create one here.