Enhanced optical and electronic properties of silicon nanosheets by phosphorus doping passivation

HIGHLIGHTS

  • who: Ye Lei and collaborators from the State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, China have published the research work: Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation, in the Journal: Materials 2023, 16, 1079. of /2023/
  • what: In this paper, the effects of phosphorus doping on photoelectric properties of silicon nanosheets was investigated.

SUMMARY

    Since the discovery of graphene in 2004, two-dimensional (2D) nanomaterials have received more attention, including single-element 2D materials such as graphene . . .

     

    Logo ScioWire Beta black

    If you want to have access to all the content you need to log in!

    Thanks :)

    If you don't have an account, you can create one here.

     

Scroll to Top

Add A Knowledge Base Question !

+ = Verify Human or Spambot ?