HIGHLIGHTS
- who: Lei Ge et al. from the The Institute of Novel Semiconductors, Shandong University, Jinan, China have published the research: Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer, in the Journal: Crystals 2022, 12, x FOR PEER REVIEW of /2022/
- what: Ga2 O3 FETs were fabricated with and without the local thinning based on high-quality quasi-two-dimensional single-crystalline u03b2-Ga2 O3 flakes exfoliated from a bulk single crystal.
- how: In this study unintentionally doped bulk u03b2-Ga2 O3 crystals were used.
SUMMARY
Ga2 . . .
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