Epitaxial growth of antiphase boundary free gaas layer on 300 mm si(001) substrate by metalorganic chemical vapour deposition with high mobility

HIGHLIGHTS

• who: Submitted and collaborators from the UnivGrenoble Alpes, LTM, Grenoble, France and CNRS, LTM, Grenoble, France , Univ. Grenoble Alpes, Grenoble, France and CEA, LETI, MINATEC Campus, Grenoble, France , Univ. Grenoble Alpes, IMEP-LAHC, Grenoble, France and CNRS, IMEP-LAHC, Grenoble, France , Applied Materials, Bowers Santa Clara, California, USA have published the research work: Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility, in the Journal: (JOURNAL) of 07/04/2016
• what: The authors show that APB-free GaAs thin layers can be . . .
  

   

  

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