Epitaxial synthesis of unintentionally doped p-type sno (001) via suboxide molecular beam epitaxy

HIGHLIGHTS

• who: Kingsley Egbo et al. from the , Berlin, Germany have published the Article: Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy, in the Journal: (JOURNAL)
• what: By employing a mixed SnO2 + Sn source the authors demonstrate suboxide molecular beam epitaxy (S-MBE) growth of phase-pure single-crystalline metastable SnO thin films on Y-stabilized ZrO2 substrates at a growth rate of ~1.0 nm/min without the need for additional oxygen. The authors investigate the impact of TS on the phase purity, growth-rate-limiting SnO desorption as . . .
  

   

  

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