Epitaxy and characterization of inp/ingaas tandem solar cells grown by movpe on inp and si substrates

HIGHLIGHTS

• who: Soresi Stefano and colleagues from the III-V Lab, Augustin Fresnel, Palaiseau, France Instituto Energu00eda Solar, Universidad Politu00e9cnica Madrid, ETS.I. Telecomunicaciu00f3n, Av. la Complutense have published the research work: Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates, in the Journal: (JOURNAL)
• what: The authors propose a prospective study for the realization of an InP/InGaAs tandem solar cell latticematched to InP on a commercially available Si template by direct MOVPE growth. In the second part, the authors intended to reproduce the whole process on . . .
  

   

  

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