Etching chemistry process optimization of ethylene diluted with helium (c2h4/he) in interconnect integration

HIGHLIGHTS

• What: This study explores the effects of different passivation gases on the properties of polymers formed on aluminum (Al) sidewalls during the process in Al-based interconnect structures. The research compares the use of nitrogen (N2 ) and ethylene diluted with helium (C2 H4 /He) as passivation gases focusing on the resulting polymer`s composition thickness and strength as well as the levels of residual chlorine post-etch. In this paper, in addition to the previously evaluated data, the polymer properties and composition of wafers subjected to a passivation gas-based metal etch using N2 or C2 H4 . . .
  

   

  

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