HIGHLIGHTS
- who: Shuichi Ogawa and colleagues from the InstitutTohoku University Sendai, Japan have published the article: Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces, in the Journal: (JOURNAL) of 18/08/2015
- what: The authors experimentally determined the emission rate of Si atoms during the oxidation on Si(001) 2 × 1 surfaces from the changes in the 2 × 1/1 × 2 domain ratio.
SUMMARY
It has been found by theoretical calculations that Si atoms are emitted not only into the Si substrate but also into the oxide. The . . .
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